111 research outputs found
Stimulated emission and ultrafast carrier relaxation in InGaN multiple quantum wells
Stimulated emission (SE) was measured from two InGaN multiple quantum well
(MQW) laser structures with different In compositions. SE threshold power
densities (I_th) increased with increasing QW depth (x). Time-resolved
differential transmission measurements mapped the carrier relaxation mechanisms
and explained the dependence of I_th on x. Carriers are captured from the
barriers to the QWs in < 1 ps, while carrier recombination rates increased with
increasing x. For excitation above I_th an additional, fast relaxation
mechanism appears due to the loss of carriers in the barriers through a
cascaded refilling of the QW state undergoing SE. The increased material
inhomogeneity with increasing x provides additional relaxation channels outside
the cascaded refilling process, removing carriers from the SE process and
increasing I_th.Comment: submitted to Appl. Phys. Let
Fabrication technology for high light-extraction ultraviolet thin-film flip-chip (UV TFFC) LEDs grown on SiC
The light output of deep ultraviolet (UV-C) AlGaN light-emitting diodes
(LEDs) is limited due to their poor light extraction efficiency (LEE). To
improve the LEE of AlGaN LEDs, we developed a fabrication technology to process
AlGaN LEDs grown on SiC into thin-film flip-chip LEDs (TFFC LEDs) with high
LEE. This process transfers the AlGaN LED epi onto a new substrate by
wafer-to-wafer bonding, and by removing the absorbing SiC substrate with a
highly selective SF6 plasma etch that stops at the AlN buffer layer. We
optimized the inductively coupled plasma (ICP) SF6 etch parameters to develop a
substrate-removal process with high reliability and precise epitaxial control,
without creating micromasking defects or degrading the health of the plasma
etching system. The SiC etch rate by SF6 plasma was ~46 \mu m/hr at a high RF
bias (400 W), and ~7 \mu m/hr at a low RF bias (49 W) with very high etch
selectivity between SiC and AlN. The high SF6 etch selectivity between SiC and
AlN was essential for removing the SiC substrate and exposing a pristine,
smooth AlN surface. We demonstrated the epi-transfer process by fabricating
high light extraction TFFC LEDs from AlGaN LEDs grown on SiC. To further
enhance the light extraction, the exposed N-face AlN was anisotropically etched
in dilute KOH. The LEE of the AlGaN LED improved by ~3X after KOH roughening at
room temperature. This AlGaN TFFC LED process establishes a viable path to high
external quantum efficiency (EQE) and power conversion efficiency (PCE) UV-C
LEDs.Comment: 22 pages, 6 figures. (accepted in Semiconductor Science and
Technology, SST-105156.R1 2018
Lateral Confinement of Electrons in Vicinal N-polar AlGaN/GaN Heterostructure
We studied orientation dependent transport in vicinal N-polar AlGaN/GaN
heterostructures. We observed significant anisotropy in the current carrying
charge parallel and perpendicular to the miscut direction. A quantitative
estimate of the charge anisotropy was made based on gated TLM and Hall
measurements. The formation of electro-statically confined one-dimensional
channels is hypothesized to explain charge anisotropy. A mathematical model was
used to verify that polarization charges distributed on miscut structure can
create lateral one-dimensional confinement in vicinal substrates. This
polarization-engineered electrostatic confinement observed is promising for new
research on low-dimensional physics and devices besides providing a template
for manufacturable one-dimensional devices
Charge control and mobility in AlGaN/GaN transistors: Experimental and theoretical studies
In this article we report on two dimensional sheet charge and mobility in GaN/AlGaN heterostructure field effect transistors. Both experimental and theoretical results are presented. Experimental results are reported on samples grown by metal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE). Theoretical studies are done to examine how spontaneous polarization and piezoelectric effect control the sheet charge density. The studies also focus on how interface roughness, aluminum mole fraction in the barrier and phonon scattering influence mobility. We find that interface roughness is a dominant source of scattering in the samples reported. Due to the variation in growth techniques we find that the MBE samples have a smoother interface compared to the MOCVD samples. By carefully fitting the experimental data we present results on interface roughness parameters for MBE and MOCVD samples. © 2000 American Institute of Physics.Peer Reviewedhttp://deepblue.lib.umich.edu/bitstream/2027.42/70927/2/JAPIAU-87-11-7981-1.pd
Phosphorous Diffuser Diverged Blue Laser Diode for Indoor Lighting and Communication.
An advanced light-fidelity (Li-Fi) system based on the blue Gallium nitride (GaN) laser diode (LD) with a compact white-light phosphorous diffuser is demonstrated for fusing the indoor white-lighting and visible light communication (VLC). The phosphorous diffuser adhered blue GaN LD broadens luminescent spectrum and diverges beam spot to provide ample functionality including the completeness of Li-Fi feature and the quality of white-lighting. The phosphorous diffuser diverged white-light spot covers a radiant angle up to 120(o) with CIE coordinates of (0.34, 0.37). On the other hand, the degradation on throughput frequency response of the blue LD is mainly attributed to the self-feedback caused by the reflection from the phosphor-air interface. It represents the current state-of-the-art performance on carrying 5.2-Gbit/s orthogonal frequency-division multiplexed 16-quadrature-amplitude modulation (16-QAM OFDM) data with a bit error rate (BER) of 3.1 × 10(-3) over a 60-cm free-space link. This work aims to explore the plausibility of the phosphorous diffuser diverged blue GaN LD for future hybrid white-lighting and VLC systems
Thermally enhanced blue light-emitting diode
We investigate thermoelectric pumping in wide-bandgap GaN based light-emitting diodes (LEDs) to take advantage of high junction temperature rather than avoiding the problem of temperature-induced efficiency droop through external cooling. We experimentally demonstrate a thermally enhanced 450 nm GaN LED, in which nearly fourfold light output power is achieved at 615 K (compared to 295 K room temperature operation), with nearly no reduction in the wall-plug efficiency (i.e., electrical-optical energy conversion efficiency) at bias V< ℏ ω/q. The LED is shown to work in a mode similar to a thermodynamic heat engine operating with charged carriers pumped into the active region by a combination of electrical work and Peltier heat (phonons) drawn from the lattice. In this optimal operating regime at 615 K, the LED injection current (3.26 A/cm[superscript 2]) is of similar magnitude to the operating point of common high power GaN based LEDs (5–35 A/cm[superscript 2]). This result suggests the possibility of removing bulky heat sinks in current high power LED products thus realizing a significant cost reduction for solid-state lighting.Bose (Firm)Singapore. Agency for Science, Technology and Researc
Electron mobility in graded AlGaN alloys
Polarization gradients in graded AlGaN alloys induce bulk electron distributions without the use of impurity doping. Since the alloy composition is not constant in these structures, the electron scattering rates vary across the structure. Capacitance and conductivity measurements on field effect transistors were used to find mobility as a function of depth. The effective electron mobility at different depths calculated from theory closely matched the measured mobility. Local bulk mobility values for different AlGaN compositions were found, and the electron mobility in AlGaN as a function of alloy composition was deduced. These were found to match with theoretical calculations
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